Focused Ion Beam Systems (FIB/FIB-SEM)

FIB-SEM systems are used as machine tools that allow the modification and the processing of samples on a micro and nano-scale. They have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials.

The MI4050 High-Performance Focused Ion Beam System is equipped with new optics and provides the world-leading SIM imaging resolution and high-definition TEM sample preparation with improved imaging resolution at low kV. The MI4050 accommodates a variety of applications such as cross-section observation, circuit modification, vector scan processing, nano-micro patterning, nano molding, and 3D nano fabrication using deposition function.

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Toward the ultimate TEM sample preparation system.
FIB-SEM systems have become an indispensable tool for characterization and analysis of the latest technologies and high performance nano-scale materials. An ever-increasing demand for ultrathin TEM lamellas without artifacts during FIB processing require the best in ion and electron optics technologies.
Hitachi's NX2000 high performance FIB and high resolution SEM system with its unique sample orientation control and triple beam technologies, supports high throughput, and high quality TEM sample preparation for cutting edge applications.

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The newly developed FIB-SEM system from Hitachi, the NX9000 incorporates an optimized layout for true high-resolution serial sectioning to tackle the latest demands in 3D structural analysis and for TEM and 3DAP analyses. The NX9000 FIB-SEM system allows the highest precision in material processing for a wide range of areas relating to advanced materials, electronic devices, biological tissues, and a multitude of other applications.

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The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability. Ethos delivers high-resolution imaging at low voltages combined with ion optics for nanoscale precision processing.

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This device is used for preparing the desired wafer part for analysis with STEM, TEM, etc. by extracting a micro sample with an ion beam in the vacuum chamber of an FIB system.

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